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REGISTRATION PENDING Currently Available as FRM230 (D, R, H)
December 2001
2N7274D, 2N7274R 2N7274H
Radiation Hardened N-Channel Power MOSFETs
Package
TO-204AA
Features
* 8A, 200V, RDS(on) = 0.50 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 3.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2 Typically Survives 1E5ions/cm2 Having an LET 35MeV/mg/cm2 and a Range 30m at 80% BVDSS
* Gamma Dot * Photo Current * Neutron * Single Event
Description
The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. Heavy ion survival from signal event drain burn-out exists for linear energy transfer (LET) of 35 at 80% of rated voltage. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S19500. Contact the Harris Semiconductor High-Reliability Marketing group for any desired deviations from the data sheet.
Symbol
D
G
S
Absolute Maximum Ratings
(TC = +25oC) Unless Otherwise Specified 2N7274D, R, H 200 200 8 5 24 20 75 30 0.60 24 8 24 -55 to +150 300 UNITS V V A A A V W W W/oC A A A oC
oC
2N7274D, 2N7274R, 2N7274H Rev. B
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain-Gate Voltage (RGS = 20k). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Current, Clamped, L = 100H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . ILM Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(c)2001 Fairchild Semiconductor Corporation
Specifications 2N7274D, 2N7274R, 2N7274H - Registration Pending
Pre-Radiation Electrical Specifications
TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER Drain-Source Breakdown Volts Gate-Threshold Volts Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero-Gate Voltage Drain Current SYMBOL BVDSS VGS(th) IGSSF IGSSR IDSS1 IDSS2 IDSS3 IAR VDS(on) RDS(on) td(on) tr td(off) tf QG(th) QG(on) QGM VGP QGS QGD VSD TT Rjc Rja Free Air Operation ID = 8A, VGD = 0 I = 8A; di/dt = 100A/s VDD = 100V, ID = 8A IGS1 = IGS2 0 VGS 20 TEST CONDITIONS VGS = 0, ID = 1mA VDS = VGS, ID = 1mA VGS = +20V VGS = -20V VDS = 200V, VGS = 0 VDS = 160V, VGS = 0 VDS = 160V, VGS = 0, TC = +125oC Time = 20s VGS = 10V, ID = 8A VGS = 10V, ID = 5A VDD = 100V, ID = 8A Pulse Width = 3s Period = 300s, Rg = 25 0 VGS 10 (See Test Circuit) MIN 200 2.0 1 15 30 3 3 7 0.6 MAX 4.0 100 100 1 0.025 0.25 24 4.20 .50 30 130 ns Turn-Off Delay Time Fall Time Gate-Charge Threshold Gate-Charge On State Gate-Charge Total Plateau Voltage Gate-Charge Source Gate-Charge Drain Diode Forward Voltage Reverse Recovery Time Junction-To-Case Junction-To-Ambient 150 80 4 60 120 14 14 nc 29 1.8 600 1.67
oC/W
UNITS V V nA nA
mA
Rated Avalanche Current Drain-Source On-State Volts Drain-Source On Resistance Turn-On Delay Time Rise Time
A V
nc
V
V ns
60
VDD RL V1
E1 = 0.5 BVDSS
VC = 0.75 BVDSS L
VDS DUT E1 VC 0.06 IL
Rg
FIGURE 1. SWITCHING TIME TESTING
FIGURE 2. CLAMPED INDUCTIVE SWITCHING, ILM
(c)2001 Fairchild Semiconductor Corporation
2N7274D, 2N7274R, 2N7274H Rev. B
2N7274D, 2N7274R, 2N7274H - Registration Pending
Post-Radiation Electrical Specifications
TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER Drain-Source Breakdown Volts (Note 4, 6) (Note 5, 6) Gate-Source Threshold Volts (Note 4, 6) (Note 3, 5, 6) Gate-Body Leakage Forward (Note 4, 6) (Note 5, 6) Gate-Body Leakage Reverse (Note 2, 4, 6) (Note 2, 5, 6) Zero-Gate Voltage Drain CurrenT (Note 4, 6) (Note 5, 6) Drain-Source On-state Volts (Note 1, 4, 6) (Note 1, 5, 6) Drain-Source On Resistance (Note 1, 4, 6) (Note 1, 5, 6) NOTES: 1. Pulse test, 300s max 2. Absolute value 3. Gamma = 300KRAD(Si) 4. Gamma = 10KRAD(Si) for "D", 100KRAD(Si) for "R". Neutron = 1E13 5. Gamma = 1000KRAD(Si). Neutron = 1E13 6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS 7. Gamma data taken 3/03/90 on TA17632 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989 9. Neutron derivation, HARRIS Application note AN-8831, Oct. 1988 SYMBOL BVDSS BVDSS VGS(th) VGS(th) IGSSF IGSSF IGSSR IGSSR IDSS IDSS VDS(on) VDS(on) RDS(on) RDS(on) TYPE 2N7274D, R 2N7274H 2N7274D, R 2N7274H 2N7274D, R 2N7274H 2N7274D, R 2N7274H 2N7274D, R 2N7274H 2N7274D, R 2N7274H 2N7274D, R 2N7274H TEST CONDITIONS VGS = 0, ID = 1mA VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = VDS, ID = 1mA VGS = 20V, VDS = 0 VGS = 20V, VDS = 0 VGS = -20V, VDS = 0 VGS = -20V, VDS = 0 VGS = 0, VDS = 160V VGS = 0, VDS = 160V VGS = 10V, ID = 8A VGS = 16V, ID = 8A VGS = 10V, ID = 5A VGS = 14V, ID = 5A MIN 200 190 2.0 1.5 MAX 4.0 4.5 100 200 100 200 25 100 4.20 6.30 0.500 0.750 UNITS V V V V nA nA nA nA A A V V
(c)2001 Fairchild Semiconductor Corporation
2N7274D, 2N7274R, 2N7274H Rev. B
2N7274D, 2N7274R, 2N7274H - Registration Pending Typical Performance Characteristics
(c)2001 Fairchild Semiconductor Corporation
2N7274D, 2N7274R, 2N7274H Rev. B
2N7274D, 2N7274R, 2N7274H - Registration Pending Packaging
SEATING PLANE R1
TO-204AA
OP TERM. 3
JEDEC TO-204AA HERMETIC STEEL PACKAGE INCHES SYMBOL A MIN 0.310 0.060 0.038 0.138 MAX 0.330 0.065 0.042 0.145 0.800 0.215 TYP 0.430 BSC 0.440 0.155 0.460 0.160 MILLIMETERS MIN 7.88 1.53 0.97 3.51 MAX 8.38 1.65 1.06 3.68 20.32 5.46 TYP 10.92 BSC 11.18 3.94 11.68 4.06 NOTES 2, 3 4 4 -
Ob OD q
s
2 1
R
Ob1
A1 Ob Ob1
A1 A L
e e1
OD e e1
NOTES: 1. These dimensions are within allowable dimensions of Rev. C of JEDEC TO-204AA outline dated 11-82. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of seating plane. 5. Controlling dimension: Inch. 6. Revision 1 dated 1-93.
L OP q R R1 s
1.187 BSC 0.495 0.131 0.655 0.525 0.185 0.675
30.15 BSC 12.58 3.33 16.64 13.33 4.69 17.14
(c)2001 Fairchild Semiconductor Corporation
2N7274D, 2N7274R, 2N7274H Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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